Resistive Memory (ReRAM, RRAM)
ReRAM, or resistive memory cells, is a type of non-volatile memory that shares some similarities with phase change memory as both are considered to be types of memristor technologies.
ReRAM, also called RRAM (Resistive Random Access Memory), is considered to be a type of memristor technology — a passive two-terminal electronic device that is designed to express only the property of an electronic component that lets it recall the last resistance it had before being shut off (“memristance”).
How ReRAM Works
ReRAM stores data using ions (charged atoms) as changes in electrical resistance, rather than electrons. According to researchers of Jülich Aachen Research Alliance (JARA), resistive memory can reduce the energy consumption of modern IT systems while increasing performance.
In resistive switching memory cells (ReRAMs), ions behave on the nanometer scale in a similar manner to a battery. The cells have two electrodes, for example made of silver and platinum, at which the ions dissolve and then precipitate again. This changes the electrical resistance, which can be exploited for data storage. Also, the reduction and oxidation processes also have another effect — they generate electric voltage. [Source: JARA]
Currently a number of companies have patented versions of ReRAM. Different forms of ReRAM are based on using different dielectric materials, including metal oxides.
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